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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1476 DESCRIPTION *Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A *Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) *Good Linearity of hFE APPLICATIONS *Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i 80 V 60 V 6 V 4 A 1 A 35 W UNIT .cn mi e IC Collector Current-Continuous IB B Base Current-Peak Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 1.4 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 25mA; IB= 0 IC= 2A; IB= 0.2A B 2SD1476 MIN 60 TYP. MAX UNIT V 1.0 1.2 100 100 40 320 V V A A IC= 1A; VCE= 4V VCB= 80V; IE= 0 VEB= 6V; IC= 0 IC= 1A; VCE= 4V IC= 3A; VCE= 4V Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w P 120-250 scs .i w O IC= 0.2A; VCE= 12V .cn mi e 20 50 MHz 0.35 1.0 0.3 s s s IC= 4A; IB1= -IB2= 0.4A hFE-1 classifications R 40-90 Q 70-150 160-320 isc Websitewww.iscsemi.cn 2 |
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